Novel 1T DRAM Cell for Low-Voltage Operation and Long Data Retention Time
نویسندگان
چکیده
A novel one-transistor dynamic random access memory (1T DRAM) cell has been proposed for a low-voltage operation and longer data retention time. The proposed 1T DRAM cell has three features compared with a conventional 1T DRAM cell: low body doping concentration, a recessed gate structure, and a P poly-Si gate. Simulation results show that the proposed 1T DRAM cell has < 1-ns program time and > 100-ms data retention time under the condition of sub-1-V operating voltage. key words: 1T DRAM, capacitorless DRAM, low voltage, data retention time
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عنوان ژورنال:
- IEICE Transactions
دوره 94-C شماره
صفحات -
تاریخ انتشار 2011